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独家CY9C6264芯片解密

    CY9C系列解密是解密研究所在芯片解密领域取得的又一重大成果。作为芯片解密业界的领航标,解密研究所率先突破且是目前为止唯一一家可解CY9C系列芯片的机构。
    以CY9C6264典型芯片为例介绍CY9C系列特性供大家解密、评估作参考,如需了解更多解密详情与报价信息请联系解密研究所商务中心。
Features
? 100% form, fit, function compatible with 8K × 8
micropower SRAM CY6264
- Fast Read and Write access: 70 ns
- Voltage range: 4.5V-5.5V operation
- Low active power: 330 mW (max.)
- Low standby power, CMOS: 495 ?W (max.)
- Easy memory expansion with CE and OE features
- TTL-compatible inputs and outputs
- Automatic power-down when deselected
? Replaces 8K × 8 Battery Backed (BB) SRAM, SRAM,
EEPROM, FeRAM, or Flash memory
? Data is automatically Write protected during power loss
? Write cycle endurance: >1015 cycles
? Data Retention: >10 Years
? Shielded from external magnetic fields
? Extra 64-bytes for device identification and tracking
? Temperature ranges
- Commercial: 0°C to 70°C
—Industrial: -40°C to +85°C
—? JEDEC STD 28-pin DIP (600-mil), 28-pin (300-mil) SOIC
—and 28-pin TSOP-1 packages. Also available in 450-mil
—wide (300-mil body width) 28-pin narrow SOIC.