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IS43LR32400E芯片解密与IC技术分析

  深圳芯片解密研究所科技芯片解密事业部专业承接IS43LR32400E单片机解密服务,我们专业的解密技术团队整合既有的解密技术资源,将为广大客户提供安全可靠、具备极强的经济价值的IC解密方案。
  这里我们提供对单片机IS43LR32400E的基本性能特征介绍,供客户及工程师参考借鉴。
  Features
  JEDEC standard 1.8V power supply.
  VDD = 1.8V, VDDQ = 1.8V
  Four internal banks for concurrent operation
  MRS cycle with address key programs y yp g
  - CAS  latency 2, 3 (clock)
  - Burst length (2, 4, 8, 16)
  - Burst type (sequential & interleave)
  Fully differential clock inputs (CK, /CK)
  All inputs except data & DM are sampled at the rising edge of the system clock
  Data I/O transaction on both edges of data strobe
  Bidirectional data strobe per byte of data (DQS)   Bidirectional data strobe per byte of data (DQS)
  DM for write masking only
  Edge aligned data & data strobe output
  Center aligned data & data strobe input
  64ms refresh period (4K cycle)
  Auto & self refresh
  Concurrent Auto Precharge
  Maximum clock frequency up to 166MHZ qyp
  Maximum data rate up to 333Mbps/pin
  Special Power Saving supports.
  - PASR (Partial Array Self Refresh)
  - Auto TCSR (Temperature Compensated Self Refresh)
  - Deep Power Down Mode
  - Programmable Driver Strength Control by Full Strength or 1/2, 1/4, 1/8 of Full Strength
  LVCMOS compatible inputs/outputs   LVCMOS compatible inputs/outputs
  90-Ball FBGA package
  以上是IS43LR32400E单片机的主要性能特征介绍,供广大客户与工程师参考借鉴。欢迎有IS43LR32400E单片机解密需求者与深圳芯片解密研究所联系。