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GAL22CV10 IC解密

  深圳芯片解密研究所长期专业承接GAL22CV10 IC解密等各类型IC芯片解密、单片机解密项目合作,有GAL22CV10 IC解密需求者欢迎与深圳芯片解密研究所联系咨询更多解密详情及报价信息,这里,我们仅提供对GAL22CV10芯片的基本介绍及性能特征分析,供客户及解密工程师参考借鉴。
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    关于GAL22LV10
    The GAL22LV10, at 4 ns maximum propagation delay time,provides the highest speed performance available in the PLD market. The GAL22LV10C can interface with both 3.3V and 5V signal levels. The GAL22LV10 is manufactured using Lattice Semiconductor's advanced 3.3V E2CMOS process, which combines CMOS with Electrically Erasable (E2) floating gate technology.High speed erase times (<100ms) allow the devices to be reprogrammed quickly and efficiently.
  The generic architecture provides maximum design flexibility by allowing the Output Logic Macrocell (OLMC) to be configured by the user.Unique test circuitry and reprogrammable cells allow complete AC, DC, and functional testing during manufacture. As a result,Lattice Semiconductor delivers 100% field programmability and functionality of all GAL products. In addition, 100 erase/write cycles and data retention in excess of 20 years are specified.
  GAL22LV10 FEATURES
  FEATURES FUNCTIONAL BLOCK DIAGRAM
  HIGH PERFORMANCE E2CMOS? TECHNOLOGY
  — 4 ns Maximum Propagation Delay
  — Fmax = 250 MHz
  — 3 ns Maximum from Clock Input to Data Output
  — UltraMOS? Advanced CMOS Technology
  3.3V LOW VOLTAGE 22V10 ARCHITECTURE
  — JEDEC-Compatible 3.3V Interface Standard
  — 5V Compatible Inputs
  — I/O Interfaces with Standard 5V TTL Devices (GAL22LV10C)
  ACTIVE PULL-UPS ON ALL PINS (GAL22LV10D)
  E2 CELL TECHNOLOGY
  — Reconfigurable Logic
  — Reprogrammable Cells
  — 100% Tested/100% Yields
  — High Speed Electrical Erasure (<100ms)
  — 20 Year Data Retention
  TEN OUTPUT LOGIC MACROCELLS
  — Maximum Flexibility for Complex Logic Designs
  — Programmable Output Polarity
  PRELOAD AND POWER-ON RESET OF ALL REGISTERS
  — 100% Functional Testability
  APPLICATIONS INCLUDE:
  — Glue Logic for 3.3V Systems
  — DMA Control
  — State Machine Control
  — High Speed Graphics Processing
  — Standard Logic Speed Upgrade
  ELECTRONIC SIGNATURE FOR IDENTIFICATION