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芯成ISSI系列IS61LV51216特征概述及芯片解密

 深圳芯片解密研究所深圳芯片解密研究所是国内最早的以研究所形式存在的专业芯片解密技术研发机构,目前在IC解密/单片机解密/芯片解密技术研究领域中取得了丰硕的科研成果,拥有数十项独家解密技术和百余种业界领先的特色解密方案,在国内外反向技术研究领域奠定了行业领导者的权威地位。

    针对IS61LV51216芯片解密等芯成ISSI单片机解密,我们以取得一系列突破,这里简要介绍IS61LV51216单片机的主要性能特征,仅供参考。

FEATURES
• High-speed access time:
— 8, 10, and 12 ns
• CMOS low power operation
• Low stand-by power:
—  Less than 5 mA (typ.) CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refreshrequired
• Three state outputs
• Data control for upper and lower bytes
• Industrial and Automotive temperatures available
• Lead-free available
DESCRIPTION
   The ISSI IS61/64LV51216 is a high-speed, 8M-bit staticRAM organized as 525,288 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. Thishighly reliable process coupled with innovative circuit design techniques, yields high-performance and low power
consumption devices.
   When CE is HIGH (deselected), the device assumes astandby mode at which the power dissipation can be reduced down with CMOS input levels.
   Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE.The active LOWWrite Enable (WE) controls both writing and reading of thememory. A data byte allows Upper Byte (UB) and LowerByte (LB) access.
   The IS61/64LV51216 is packaged in the JEDEC standard 44-pin TSOP Type II and 48-pin Mini BGA (9mm x 11mm).
 有IS61LV51216解密需求者请与深圳芯片解密研究所联系咨询解密合作详情及解密报价。我们在ISSI芯成单片机解密领域已经取得重要技术研究成果,成功为客户提供了高效可靠的解密服务。

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